SCTHS300N75G3AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Features

Order code 23 SCTHS300N75G3AG VDS 750 V RDS(on) typ. 6.5 mΩ ID 300 A.
AEC-Q101 qualified 1.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Source sensing pin for increased efficiency.

STMicroelectronics

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Datasheet Details

Part number	SCTHS300N75G3AG
Manufacturer	STMicroelectronics
File Size	284.68 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTHS300N75G3AG Datasheet
Additional preview pages of the SCTHS300N75G3AG datasheet.

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Full PDF Text Transcription

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SCTHS300N75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mΩ typ., 300 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) Driver source(2) Power source(1) Features Order code 23 SCTHS300N75G3AG VDS 750 V RDS(on) typ. 6.5 mΩ ID 300 A • AEC-Q101 qualified 1 • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Application • Main inverter (electric traction) NG3DS2PS1D4 Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Published: Feb 18, 2023 |