SCTHS250N65G2G - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code 23 SCTHS250N65G2G VDS 650 V RDS(on) typ. 8.0 mΩ ID 250 A.
AEC-Q101 qualified 1.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source sensing pin for increased efficiency.

STMicroelectronics

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Datasheet Details

Part number	SCTHS250N65G2G
Manufacturer	STMicroelectronics
File Size	260.34 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTHS250N65G2G Datasheet
Additional preview pages of the SCTHS250N65G2G datasheet.

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Full PDF Text Transcription

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SCTHS250N65G2G Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 8.0 mΩ typ., 250 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) Driver source(2) Power source(1) Features Order code 23 SCTHS250N65G2G VDS 650 V RDS(on) typ. 8.0 mΩ ID 250 A • AEC-Q101 qualified 1 • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV NG3DS2PS1D4 Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Published: Jun 26, 2023 |