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FDMC2674 - N-Channel MOSFET

Description

efficiency in power conversion applications.

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Features

  • Max RDS(on) = 366 mW at VGS = 10 V, ID = 1.0 A.
  • Typ Qg = 12.7 nC at VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • Optimized Efficiency at High Frequencies.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Pb.
  • Free, Halide Free and RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDMC2674
Manufacturer onsemi
File Size 275.65 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC2674 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, UltraFET Trench 220 V, 7.0 A, 366 mW FDMC2674 General Description UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features • Max RDS(on) = 366 mW at VGS = 10 V, ID = 1.0 A • Typ Qg = 12.
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