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PBSS5220V Datasheet, NXP

PBSS5220V transistor equivalent, 2a pnp low vcesat (biss) transistor.

PBSS5220V Avg. rating / M : 1.0 rating-11

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PBSS5220V Datasheet

Features and benefits

s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to.

Application

s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fan.

Description

PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collect.

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TAGS

PBSS5220V
PNP
low
VCEsat
BISS
transistor
PBSS5220PAPS
PBSS5220T
PBSS5230PAP
NXP

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