PBSS5220T Overview
PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −20 −2 −3 113 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5230T Note.
PBSS5220T Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements
- Cost effective alternative to MOSFETs in specific
