PBSS5220V
description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.
1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (h FE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications
1.4 Quick reference data
Table 1: VCEO IC ICM RCEsat Quick reference data Conditions open base tp ≤ 300 µs IC =
- 1 A; IB =
- 100 m A Min Typ 140 Max
- 20
- 2
- 4 210 Unit V A A mΩ collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance Symbol Parameter
Philips Semiconductors
20 V, 2 A PNP low VCEsat (BISS) transistor
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2. Pinning information
Tabl...
