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PBSS5230QA - PNP Transistor

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

NPN complement: PBSS4230QA.

2.

Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • High energy efficiency due to less heat generation.
  • Reduced Printed-Circuit Board (PCB) area requirements.
  • Solderable side pads.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS5230QA 30 V, 2 A PNP low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4230QA. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High energy efficiency due to less heat generation • Reduced Printed-Circuit Board (PCB) area requirements • Solderable side pads • AEC-Q101 qualified 3. Applications • Loadswitch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g. motors, fans) 4.
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