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PBSS5230PAP Datasheet, nexperia

PBSS5230PAP transistor equivalent, 2a pnp/pnp low vcesat (biss) transistor.

PBSS5230PAP Avg. rating / M : 1.0 rating-11

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PBSS5230PAP Datasheet

Features and benefits


* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduc.

Application


* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e.g..

Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN. 2. Features and benefit.

Image gallery

PBSS5230PAP Page 1 PBSS5230PAP Page 2 PBSS5230PAP Page 3

TAGS

PBSS5230PAP
PNP
PNP
low
VCEsat
BISS
transistor
nexperia

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