PBSS5230T
FEATURES
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements
- Cost effective alternative to MOSFETs in specific applications. APPLICATIONS
- Power management
- DC/DC converters
- Supply line switching
- Battery charger
- LCD backlighting.
- Peripheral drivers
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION
PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5230T Note 1.
- = p: Made in Hong Kong.
- = t: Made in Malaysia.
- = W: Made in China. MARKING CODE(1) 3K-
Top view handbook, halfpage
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION
PARAMETER collector-emitter voltage collector current (DC) peak collector current...
