Datasheet Details
| Part number | PBSS5230T |
|---|---|
| Manufacturer | NXP |
| File Size | 197.30 KB |
| Description | PNP Transistor |
| Datasheet |
 PBSS5230T Datasheet
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| Part number | PBSS5230T |
|---|---|
| Manufacturer | NXP |
| File Size | 197.30 KB |
| Description | PNP Transistor |
| Datasheet |
PBSS5230T Datasheet
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PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. 1 Top view handbook, halfpage PBSS5230T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.
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