PBSS5230QA
description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN plement: PBSS4230QA.
2. Features and benefits
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- Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain h FE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified
3. Applications
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- Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance tp ≤ 1 ms; pulsed IC = -1 A; IB = -100 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Conditions open base Min...
