PBSS5230PAP
description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP plement: PBSS4230PANP. NPN/NPN plement: PBSS4230PAN.
2. Features and benefits
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Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain h FE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified
3. Applications
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- Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Symbol Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = -1 A; IB = -0.1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 195 mΩ collector-emitter voltage collector current peak collector current single pulse; tp ≤ 1 ms open base -30 -2 -3 V A A Quick...
