Datasheet4U Logo Datasheet4U.com

PBSS5230PAP - PNP/PNP low VCEsat (BISS) transistor

Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4230PANP.

NPN/NPN complement: PBSS4230PAN.

Features

  • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBSS5230PAP 2A PNP/PNP low VCEsat (BISS) transistor nexperia
PBSS5230QA PNP Transistor nexperia
PBSS5220PAPS PNP/PNP Transistor nexperia
PBSS5240T 2A PNP low VCEsat transistor nexperia
PBSS5240X PNP transistor nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PBSS5230QA PNP low VCEsat (BISS) transistor
PBSS5230T PNP Transistor
PBSS5220T PNP low VCEsat (BISS) transistor
PBSS5220V 2A PNP low VCEsat (BISS) transistor
PBSS5240T PNP low VCEsat (BISS) transistor

Full PDF Text Transcription

Click to expand full text
DF N2 020 -6 PBSS5230PAP 11 January 2013 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN. 2. Features and benefits • • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • • Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4.
Published: |