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NXP Semiconductors Electronic Components Datasheet

PBSS5230T Datasheet

PNP Transistor

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PBSS5230T
30 V, 2 A PNP low VCEsat (BISS) transistor
Rev. 2 — 4 June 2012
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small
Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4230T.
1.2 Features and benefits
Low collector-emiter saturation voltage
VCEsat
High collector current capability:
IC and ICM
1.3 Applications
DC-to-DC conversion
Supply line switching
Battery charger
LCD backlighting
Higher efficiency leading to less heat
generation
AEC-Q101 qualified
Driver in low supply voltage
applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays,
buzzers and motors)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp 1 ms
IC = -500 mA; IB = -50 mA; pulsed;
tp 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -30 V
- - -2 A
- - -3 A
- 160 220


NXP Semiconductors Electronic Components Datasheet

PBSS5230T Datasheet

PNP Transistor

No Preview Available !

NXP Semiconductors
PBSS5230T
30 V, 2 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
B base
E emitter
C collector
Simplified outline
3
12
SOT23 (TO-236AB)
Graphic symbol
3
1
2
sym013
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS5230T
TO-236AB
4. Marking
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Table 4. Marking codes
Type number
PBSS5230T
[1] % = placeholder for manufacturing site code
5. Limiting values
Marking code[1]
%3G
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
open emitter
open base
open collector
single pulse; tp 1 ms
Tamb 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
[1]
[2]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Min Max Unit
- -30 V
- -30 V
- -5 V
- -2 A
- -3 A
- -300 mA
- 300 mW
- 480 mW
- 150 °C
-65 150 °C
-65 150 °C
PBSS5230T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 4 June 2012
© NXP B.V. 2012. All rights reserved.
2 of 10


Part Number PBSS5230T
Description PNP Transistor
Maker NXP
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PBSS5230T Datasheet PDF






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