PBSS5220T - PNP low VCEsat (BISS) transistor

NXP

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Datasheet Details

Part number	PBSS5220T
Manufacturer	NXP
File Size	81.51 KB
Description	PNP low VCEsat (BISS) transistor
Datasheet	PBSS5220T_PhilipsSemiconductors.pdf

PBSS5220T Product details

Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 20 2 3 113 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters.MARKING TYPE NUMBER PBSS5230T Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. Fig.1 Simplified outline (SOT23) and symbol.

Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability: IC and ICM.
Higher efficiency leading to less heat generation.
Reduced printed-circuit board requirements.
Cost effective alternative to MOSFETs in specific.

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Published: Oct 8, 2007 |