PBSS5230T - PNP Transistor

NXP

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Datasheet Details

Part number	PBSS5230T
Manufacturer	NXP
File Size	197.30 KB
Description	PNP Transistor
Datasheet	PBSS5230T_PhilipsSemiconductors.pdf

PBSS5230T Product details

Description

PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. 1 Top view handbook, halfpage PBSS5230T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability: IC and ICM.
Higher efficiency leading to less heat generation.
Reduced printed-circuit board requirements.
Cost effective alternative to MOSFETs in specific.

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Published: Oct 8, 2007 |