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PBSS5240T Datasheet

PNP low VCEsat (BISS) transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5240T
40 V, 2 A
PNP low VCEsat (BISS) transistor
Product specification
Supersedes data of 2001 Oct 31
2004 Jan 15


NXP Semiconductors Electronic Components Datasheet

PBSS5240T Datasheet

PNP low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
40 V, 2 A
PNP low VCEsat (BISS) transistor
Product specification
PBSS5240T
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation
Replacement for SOT89/SOT223 standard packaged
transistor.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX. UNIT
40
2
3
<220
V
A
A
m
APPLICATIONS
Supply line switching circuits
Battery management applications
DC/DC converter applications
Strobe flash units
Heavy duty battery powered equipment (motor and lamp
drivers).
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4240T.
MARKING
TYPE NUMBER
PBSS5240T
MARKING CODE(1)
ZF*
Note
1. = p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
handbook, halfpage
3
1
Top view
1
2
MAM256
3
2
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PBSS5240T
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Jan 15
2


Part Number PBSS5240T
Description PNP low VCEsat (BISS) transistor
Maker NXP
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PBSS5240T Datasheet PDF






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