• Part: PBSS5240T
  • Description: 2A PNP low VCEsat transistor
  • Category: Transistor
  • Manufacturer: Nexperia
  • Size: 974.47 KB
Download PBSS5240T Datasheet PDF
Nexperia
PBSS5240T
description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN plement: PBSS4240T 2. Features and benefits - Low collector-emitter saturation voltage - High current capability - Improved device reliability due to reduced heat generation 3. Applications - Supply line switching circuits - Battery management applications - DC/DC converter applications - Strobe flash units - Heavy duty battery powered equipment (motor and lamp drivers) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC ICM RCEsat collector current peak collector current collector-emitter saturation resistance Conditions open base single pulse; tp ≤ 1 ms IC = -500 m A; IB = -50 m A; Tamb = 25 °C [1] [1] Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint. Min Typ Max Unit - - -40 V - - -2 - - -3 - 140 220 mΩ 5. Pinning information Table 2....