PBSS5230QA Datasheet | NXP Semiconductors

description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN plement: PBSS4230QA. 2. Features and benefits - - - - - - - Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain h FE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3. Applications - - - - - Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance tp ≤ 1 ms; pulsed IC = -1 A; IB = -100 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Conditions open base Min Typ 120 Max -30 -2 -3 180 Unit V A A mΩ Scan or click this QR code to view the latest information for this product Free Datasheet http://../ NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pin 1 2 3 4 Pinning information Symbol Description B E C C base emitter collector collector 2 Transparent top view Simplified outline Graphic symbol 3 sym132 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Package Name PBSS5230QA DFN1010D-3 Description plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals Version SOT1215 Type number 7. Marking Table 4. Marking codes Marking code 00 00 10 READING DIRECTION Type number PBSS5230QA MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 INDICATION MARK MARK-FREE AREA READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description All information provided in this document...