FDT86246L mosfet equivalent, n-channel powertrench mosfet.
General Description
* Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A
* Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A
* High performance trench technology fo.
* Load Switch
* Primary Switch
* Buck/Boost Switch
D D
SOT-223
S
D G
GDS
MOSFET Maximum Ratings TC = 25.
* Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A
* Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used
surface mou.
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