FDT86246 Description
This N−Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® Process that has been optimized for RDS(on), switching performance and ruggedness.
FDT86246 Key Features
- Max RDS(on) = 236 mW at VGS = 10 V, ID = 2 A
- Max RDS(on) = 329 mW at VGS = 6 V, ID = 1.7 A
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability in a Widely Used
- Fast Switching Speed
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS pliant