Datasheet Details
| Part number | FDT86246 |
|---|---|
| Manufacturer | onsemi |
| File Size | 243.98 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDT86246 Datasheet
|
|
|
General Description
This N
advanced PowerTrench® Process that has been optimized for RDS(on), switching performance and ruggedness.
Key Features
- Max RDS(on) = 236 mW at VGS = 10 V, ID = 2 A.
- Max RDS(on) = 329 mW at VGS = 6 V, ID = 1.7 A.
- High Performance Trench Technology for Extremely Low RDS(on).
- High Power and Current Handling Capability in a Widely Used Surface Mount Package.
- Fast Switching Speed.
- 100% UIL Tested.
- These Devices are Pb.
- Free and are RoHS Compliant Typical.