FDT86246L Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
FDT86246L Key Features
- Max rDS(on) = 228 mW at VGS = 10 V, ID = 2 A
- Max rDS(on) = 280 mW at VGS = 4.5 V, ID = 1.8 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a widely used
- Fast Switching Speed
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS pliant