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FDT86256 - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.

G-S zener has been added to enhance ESD voltage level.

Fast switching speed 100% UIL Tested

Key Features

  • Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A.
  • Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A.
  • Very low Qg and Qgd compared to competing trench technologies August 2011 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDT86256 N-Channel PowerTrench® MOSFET FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ Features „ Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A „ Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A „ Very low Qg and Qgd compared to competing trench technologies August 2011 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.