FDT86244 Description
Shielded Gate MOSFET Technology Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package Fast Switching Speed 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced...
FDT86244 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A
- Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability in a Widely Used
- Fast Switching Speed
- 100% UIL Tested
- RoHS pliant