FDT86102LZ Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications DC-DC conversion Inverter Synchronous Rectifier D SOT-223 S D G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG...
FDT86102LZ Key Features
- Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A
- Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A
- HBM ESD protection level > 6 kV typical (Note 4)
- Very low Qg and Qgd pared to peting trench technologies
- Fast switching speed
- 100% UIL Tested
- RoHS pliant