FDT1600N10ALZ Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance and maintain superior switching performance.
FDT1600N10ALZ Key Features
- RDS(on) = 121 mW (Typ.) @ VGS = 10 V, ID = 2.8 A
- RDS(on) = 156 mW (Typ.) @ VGS = 5 V, ID = 1.8 A
- Low Gate Charge (Typ. 2.9 nC)
- Low Crss (Typ. 2.04 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Protection Level: HBM > 5.2 kV, MM > 400 V, CDM > 1.5 kV
- RoHS pliant