Datasheet Details
| Part number | FDT434P |
|---|---|
| Manufacturer | onsemi |
| File Size | 226.00 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDT434P Datasheet
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General Description
low gate charge for superior switching performance.
Low Dropout RegulatorKey Features
- 5.5 A,.
- 20 V. RDS(ON) = 0.050 Ω @ VGS =.
- 4.5 V RDS(ON) = 0.070 Ω @ VGS =.
- 2.5 V.
- Low gate charge (13nC typical).
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability in a widely used surface mount package. D D SOT-22 3 S D G G D S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain.