FDMC8678S mosfet equivalent, n-channel power trench mosfet.
* Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A
* Advanced Package and Silicon combination for low rDS(on) and high.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining .
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The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This dev.
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