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FDMC86183 - N-Channel MOSFET

Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 12.8 mW at VGS = 10 V, ID = 16 A.
  • Max RDS(on) = 34.6 mW at VGS = 6 V, ID = 8 A.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDMC86183
Manufacturer onsemi
File Size 398.62 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC86183 Datasheet

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Full PDF Text Transcription

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 47 A, 12.8 mW FDMC86183 General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 12.8 mW at VGS = 10 V, ID = 16 A • Max RDS(on) = 34.
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