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FDMC86139P - MOSFET

General Description

Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technol

Key Features

  • General.

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FDMC86139P P-Channel PowerTrench® MOSFET FDMC86139P P-Channel PowerTrench® MOSFET -100 V, -15 A, 67 mΩ June 2014 Features General Description „ Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A „ Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A „ Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL Tested „ RoHS Compliant Applications „ Active Clamp Switch „ Load Switch Top Bottom Pin 1 SS S G S S D D D D D D MLP 3.