FDMC86106LZ mosfet equivalent, n-channel power trench mosfet.
* Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
* HBM ESD protection level > 3 KV typical (Note 4)
* 10.
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been adde.
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