FDMC86102LZ mosfet equivalent, n-channel mosfet.
* Shielded Gate MOSFET Technology
* Max RDS(on) = 24 mW at VGS = 10 V, ID = 6.5 A
* Max RDS(on) = 35 mW at VGS = 4.5 V, ID = 5.5 A
* HBM ESD Protection Le.
* DC−DC Switching
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Parameter
Ratings Unit
VDS Drai.
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