* Shielded Gate MOSFET Technology
* Max RDS(on) = 24 mW at VGS = 10 V, ID = 7A
* Max RDS(on) = 38 mW at VGS = 6 V, ID = 5 A
* Low Profile − 1 mm max in Po.

* DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameter Ratings Unit VDS Dra.

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features
* Shie.

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