FDMC86102 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A
* Low Profile - 1 mm max in Power 33
* 100% UIL Tested
* Ro.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application
* DC - DC Convers.

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