* Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A
* Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
* HBM ESD Protection Level > 3 kV Typical (Note 1)
* 10.

* DC−DC Conversion DATA SHEET www.onsemi.com 8765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR .

This N−Channel logic Level MOSFETs are produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. G−S z.

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