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FDMC86102L Datasheet, ON Semiconductor

FDMC86102L mosfet equivalent, n-channel mosfet.

FDMC86102L Avg. rating / M : 1.0 rating-11

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FDMC86102L Datasheet

Features and benefits


* Shielded Gate MOSFET Technology
* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A
* Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.5 A
* Low Profile − 1 mm Max .

Application


* DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain t.

Description

This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features
* Shie.

Image gallery

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TAGS

FDMC86102L
N-Channel
MOSFET
ON Semiconductor

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