FDMC86102L mosfet equivalent, mosfet.
General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A
* L.
* Shielded Gate MOSFET Technology
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A
* Low Profile - 1 mm max in Power 33
* RoHS Compliant
This N-Channel MOSFET is produced using Fairc.
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