Trench Datasheet | Specifications & PDF Download

HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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TO-247-3L NGW40T65M3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 28 June 2024 Product data sheet 1. General Desc

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SMD Type TrenchPLUS standard level FET KUK7105-40ATE TO-263 + 0 .1 1 .2 7 -0 .1 Transistors IC www.DataSheet4U.com Unit: mm +0.1 1.27-0.1 +0.2 4.57

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New Product V30100C, VF30100C, VB30100C & VI30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF

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Elektronische Bauelemente SBL20D100F 100V, 20A Low VF Trench Barrier Schottky Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen fr

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Elektronische Bauelemente SBL10U100DS1 100V, 10A Low VF Trench Barrier Schottky Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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Silicon FS Trench IGBT CRG40T120AK5HDZ General Description： Using owner proprietary trench design and advanced Field Stop (FS) technology, offering s

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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PD - 97562 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l

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 MT4607 Dual N & P-Channel Po werTrench® MOSFET  Features General Description These dual N and P-Channel enhancement mode power field effe

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NX7002BKS 60 V, dual N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Tran

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Trench Schottky Barrier Rectifiers 30SQ050 R-6 Reverse Voltage - 50V Forward Current - 30A FEATURES The plastic package carries Underwriters Laborat

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http://www.ncepower.com Pb Free Product NCEP01T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology t

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http://www.ncepower.com Pb Free Product NCEP60T15K NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15K uses Super Trench technology t

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MDV1526 – Single N-Channel Trench MOSFET 30V MDV1526 Single N-channel Trench MOSFET 30V, 24A, 11mΩ General Description The MDV1526 uses advanced Mag

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES • ’Trench’ technology • Low on-state resista

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ Features „ Max rDS(on) = 19 mΩ at VGS =

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