HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

Trench Schottky Barrier Rectifiers 30SQ050 R-6 Reverse Voltage - 50V Forward Current - 30A FEATURES The plastic package carries Underwriters Laborat

Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

IRFZ44 ® Pb Free Plating Product IRFZ44 Pb 45 Ampere Typical N-Channel Trench Power MOSFETs General Description The IRFZ44 is N-channel MOS Fiel

NCEP023N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized

SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

FM3080SC Description FM3080SC N-Channel Trench Power MOSFET Features Application  30V,65A  Load Switch  RDS(ON)=5.4mΩ (Typ.) @ VGS =10V 

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

N-Channel Trench Power MOSFET General Description The D444 combines advanced trench MOSFET technology with a low resistance package to provide extreme

http://www.ncepower.com Pb Free Product NCEP15T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology tha

Xiner XNF20N60T 600V，20A，Trench-FS IGBT Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typi

TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

http://www.ncepower.com NCEP02515K NCE N-Channel Super Trench Power MOSFET Description The NCEP02515K uses Super Trench technology that is uniquely

MDU1511 – Single N-Channel Trench MOSFET 30V ㅊ MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ General Description The MDU1511 uses advanc

Silicon FS Trench IGBT CRG25T135BKR3S General Description： Using CRM's proprietary trench design, advanced FS(field stop) technology and integrated w

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES • ’Trench’ technology • Low on-state resista

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th