IRFZ44
Description
The IRFZ44 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM.
Features
- VDS=60V；ID=45A@ VGS=10V； RDS(ON)<7.5mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
Application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
G DS TO-251 Top View
Schematic Diagram
VDSS = 60 V IDSS = 45 A RDS(ON) = 6.0 mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25℃
ID (DC) IDM (pluse)
Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt
Peak Diode Recovery Voltage
EAS TJ,TSTG
Maximum Power Dissipation(Tc=25℃) Derating Factor Single Pulse Avalanche...
