IRFZ44VZSPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- 95947A
IRFZ44VZPb F IRFZ44VZSPb F IRFZ44VZLPb F
HEXFET® Power MOSFET
VDSS = 60V
G RDS(on) = 12mΩ S ID = 57A
TO-220AB
D2Pak
TO-262
IRFZ44VZPb F IRFZ44VZSPb F IRFZ44VZLPb F
Absolute Maximum Ratings
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS...
