Download IRFZ44 Datasheet PDF
Fairchild Semiconductor
IRFZ44
FEATURES - Avalanche Rugged Technology - Rugged Gate Oxide Technology - Lower Input Capacitance - Improved Gate Charge - Extended Safe Operating Area - 175° C Operating Temperature - Lower Leakage Current: 10µA (Max.) @ VDS = 60V - Lower RDS(ON): 0.020Ω (Typ.) .. BVDSS = 60 V RDS(on) = 0.024Ω ID = 50 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 60 50 35.4 200 ±20 857 50 12.6 5.5 126 0.84 - 55 to +175 Units V A A V m J A m J V/ns W W/°C °C...