FDMC86012 mosfet equivalent, mosfet.
* Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A
* Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A
* High performance technology for extremely low rDS(on)
* 3.3 V input synchronous buck switch
* Synchronous rectifier
Pin 1
Pin 1
S S SG
S S
D D
D DD D
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This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resi.
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