General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
* Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A
* L.

* Shielded Gate MOSFET Technology
* Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
* Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A
* Low Profile - 1 mm max in Power 33
* 100% UIL Tested
* RoHS Compliant This N-Channel MOSFET i.

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