* Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A
* Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.4 A
* Low Profile − 1 mm Max in Power 33
* 100% UIL Tested

* DC − DC Conversion www.onsemi.com 8 765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC862.

This N−Channel MOSFET is produced using ON Semiconductor‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features .

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