FDMC86244 mosfet equivalent, n-channel power trench mosfet.
* Max rDS(on) = 134 mΩ at VGS = 10 V, ID = 2.8 A
* Max rDS(on) = 186 mΩ at VGS = 6 V, ID = 2.4 A
* Low Profile - 1 mm max in Power 33
* 100% UIL Tested
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
* DC - DC Convers.
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