FDMC8622 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A
* Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A
* High performance trench technology for extremely low rDS(on)
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Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Application
* DC-DC Primary Switch D D D D D D D G 5 6 7 8 4 3 2 1 .

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