* Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A
* Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A
* Advanced Package and Silicon combination for low rDS(on) and.

* Primary MOSFET
* MV synchronous rectifier Top Bottom S Pin 1 S S S G S S D D D G D D D D D Power 33 MOSFE.

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications
* Primary MOSFET.

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