FDMC86248 mosfet equivalent, n-channel power trench mosfet.
* Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A
* Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A
* Advanced Package and Silicon combination for low rDS(on) and.
* Primary MOSFET
* MV synchronous rectifier
Top
Bottom S Pin 1 S S S G S S D D D G D D D D
D
Power 33
MOSFE.
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