FDMC86160ET100 Datasheet, Fairchild Semiconductor

General Description
* Extended TJ rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
* Max rDS(on) = 23 mΩ .

where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions. Applications.

* Extended TJ rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
* Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
* High performance technology for extremely low rDS(on)
* Termination .