* Shielded Gate MOSFET Technology
* Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A
* Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A
* High Performance Technology.

where ulta low RDS(on) is required in small spaces such as High performance VRM, POL and orring functions. Applications .

This N−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is well suited for applications where ulta low RDS(on) .

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