FDMC86160ET100 mosfet equivalent, n-channel mosfet.
* Extended TJ Rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A
* Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A.
where ulta low RDS (on) is required in small spaces such as High performance VRM, POL and orring functions.
Features
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is well suited for applications where ulta low RDS (on).
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 470.79KB)