CTL0642NS-R3 datasheet, mosfet equivalent, CT Micro

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datasheet Download (Size : 1.96MB)

Features and benefits

* Drain-Source Breakdown Voltage VDSS 20 V
* Drain-Source On-Resistance RDS(ON) 17mΩ, at VGS= 4.5V, IDS= 6.4A RDS(ON) 20mΩ, at VGS= 2.5V, IDS= 5.5A RDS(ON) 25mΩ, .

Application

* Power Management
* Battery Powered System
* Portable Equipment
* DC/DC Converter Package Outline Desc.

Description

The CTL0642NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Schematic Drain .

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